View TEA5757_4659863.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

d a t a sh eet product speci?cation supersedes data of 1996 jan 09 file under integrated circuits, ic01 1999 aug 26 integrated circuits TEA5757; tea5759 self tuned radio (str)
1999 aug 26 2 philips semiconductors product speci?cation self tuned radio (str) TEA5757; tea5759 features the tuning system has an optimized ic partitioning both from application (omitting interferences) and flexibility (removable front panel option) point of view: the tuning synthesizer is on-chip with the radio the tuning quality is superior and requires no if-counter for stop-detection; it is insensitive to ceramic filter tolerances in combination with the microcontroller, fast, low-power operation of preset mode, manual-search, auto-search and auto-store are possible the local (internal) controller function facilitates reduced and simplified microcontroller software the high integration level (radio and tuning synthesizer on one chip) means fewer external components with regard to the communication between the radio and the microcontroller (90% less components compared to the digital tuning application of a radio ic with external pll tuning function) and a simple and small printed-circuit board there will be no application considerations for the tuning system, with regards to quality and high integration level, since there will be no external 110 mhz buffers, loop filter or false lock elimination the inherent fuzzy logic behaviour of the self tuned radio (str), which mimics hand tuning, yields a potentially fast yet reliable tuning operation the level of the incoming signal at which the radio must lock is software programmable two programmable ports high selectivity with distributed if gain soft mute signal dependent stereo-blend high impedance mosfet input on am wide supply voltage range of 2.5 to 12 v low current consumption 18 ma at am and fm (including tuning synthesizer) high input sensitivity low output distortion due to the new tuning concept, the tuning is independent of the channel spacing. general description the TEA5757; tea5759 is a 44-pin integrated am/fm stereo radio circuit including a novel tuning concept. the radio part is based on the tea5712. the TEA5757 is used in fm-standards in which the local oscillator frequency is above the radio frequency (e.g. european and american standards). the tea5759 is the version in which the oscillator frequency is below the radio frequency (e.g. japanese standard). the new tuning concept combines the advantages of hand tuning with electronic facilities and features. user intelligence is incorporated into the tuning algorithm and an improvement of the analog signal processing is used for the afc function. ordering information type number package name description version TEA5757h qfp44 plastic quad ?at package; 44 leads (lead length 1.3 mm); body 10 10 1.75 mm sot307-2 tea5759h
1999 aug 26 3 philips semiconductors product speci?cation self tuned radio (str) TEA5757; tea5759 quick reference data notes 1. v cc1 =3v;v cc2 =12v;v ddd =3v;f i = 1 mhz; m = 0.3; f m = 1 khz; measured in fig.9 with s1 in position a and s2 in position b; v n refers to pin voltages; v i(n) refers to test circuit (see fig.9). 2. v cc1 =3v; v cc2 = 12 v; v ddd =3v; f i = 100 mhz; d f m = 22.5 khz; f m = 1 khz; measured in fig.9 with s2, s3 and s5 in position a; v n refers to pin voltages; v i(n) refers to test circuit (see fig.9). 3. v cc1 =3v; v cc2 = 12 v; v ddd =3v; v i3(l + r) = 155 mv; v pilot = 15.5 mv; f i = 1 khz; measured in fig.9 with s2 and s3 in position b. symbol parameter conditions min. typ. max. unit v cc1 supply voltage 2.5 - 12 v v cc2 supply voltage for tuning -- 12 v v tune tuning voltage 0.7 - v cc2 - 0.75 v i cc1 supply current am mode 12 15 18 ma fm mode 13 16 19 ma i dd supply current am mode - 3.3 - ma fm mode - 2.7 - ma i cc2 supply current for tuning in preset mode (band-end to band-end) -- 800 m a t amb ambient temperature - 15 - +60 c am performance; note 1 v 10 af output voltage v i1 =5mv 364570 mv v i1 rf sensitivity input voltage (s+n)/n = 26 db 40 55 70 m v thd total harmonic distortion v i1 =1mv - 0.8 2.0 % fm performance; note 2 v 10 af output voltage v i5 =1mv 404857 mv v i5 rf limiting sensitivity v 10 at - 3 db; v 10 is 0 db at v i5 =1mv 0.4 1.2 3.8 m v thd total harmonic distortion if ?lter sfe10.7ms3a20k-a - 0.3 0.8 % mpx performance; note 3 a cs channel separation 26 30 - db
1999 aug 26 4 philips semiconductors product speci?cation self tuned radio (str) TEA5757; tea5759 this text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the acrobat reader .this text is here in _ white to force landscape pages to be rotated correctly when browsing through the pdf in the acrobat reader.this text is here inthis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the acrobat reader. white to force landscape pages to be ... block diagram handbook, full pagewidth prescaler programmable counter stabilizer window detector last-station memory am/fm indicator in-lock detector fm detector pilot detector charge pump multiplexer crystal oscillator shift register fm front-end fm oscillator fm if2 fm if1 fm mixer sequential circuit status register am front-end am oscillator am detector v/i converter am mixer am if agc afc hard mute level pll decoder matrix sds mute up down level rfgnd data bus-clock write-enable fm-rfi v stab(a) v stab(b) am-rfi xtal ripple 25 23 1 26 30 31 2 agc am-ifi/o2 am-mixer amosc am-ifi1 6 40 41 36 44 822 32 20 19 13 15 14 9 12 24 16 18 17 39 37 33 35 35 38 43 42 28 27 29 34 7 21 10 11 4 mo/st afro mute afc (n) afc (p) afc vco lfi pilfil aflo stereo stereo mono 38 khz 19 khz fm-ifi1 fm-ifi2 fm-ifo1 fm-mixer fmosc fm-rfo v cc1 v ddd TEA5757; tea5759 fm am dgnd p1 p0 tune rfgnd mpxi afo v cc2 ifgnd fsi fmdem mha111 fig.1 block diagram.
1999 aug 26 5 philips semiconductors product speci?cation self tuned radio (str) TEA5757; tea5759 pinning symbol pin description ripple 1 ripple capacitor input am-rfi 2 amrf input fm-rfo 3 parallel tuned fmrf circuit to ground rfgnd 4 rf ground and substrate fmosc 5 parallel tuned fm-oscillator circuit to ground amosc 6 parallel tuned am-oscillator circuit to ground v cc1 7 supply voltage tune 8 tuning current output vco 9 voltage controlled oscillator input afo 10 am/fm af output (output impedance typical 5 k w ) mpxi 11 stereo decoder input (input impedance typical 150 k w ) lfi 12 loop-?lter input mute 13 mute input aflo 14 left channel output (output impedance typical 4.3 k w ) afro 15 right channel output (output impedance typical 4.3 k w ) pilfil 16 pilot detector ?lter input ifgnd 17 ground of if, detector and mpx stage fmdem 18 ceramic discriminator input afc (n) 19 afc negative output afc (p) 20 afc positive output fsi 21 ?eld-strength indicator v cc2 22 supply voltage for tuning v ddd 23 digital supply voltage mo/st 24 mono/stereo and tuning indication output xtal 25 crystal input dgnd 26 digital ground bus-clock 27 bus-clock input data 28 bus data input/output write-enable 29 bus write-enable input p0 30 programmable output port (p0) p1 31 programmable output port (p1) afc 32 450 khz lc-circuit fm-ifi2 33 fmif input 2 (input impedance typical 330 w ) v stab(b) 34 internal stabilized supply voltage (b) fm-ifo1 35 fmif output 1 (output impedance typical 330 w ) am-ifi/o2 36 input/output to if-tank (ift); output: current source fm-ifi1 37 fmif input 1 (input impedance typical 330 w ) v stab(a) 38 internal stabilized supply voltage (a) fm-mixer 39 ceramic ?lter output (output impedance typical 330 w ) am-mixer 40 open-collector output to ift
1999 aug 26 6 philips semiconductors product speci?cation self tuned radio (str) TEA5757; tea5759 am-ifi1 41 ift or ceramic ?lter input (input impedance typical 3 k w ) rfgnd 42 fmrf ground fm-rfi 43 fmrf aerial input (input impedance typical 40 w ) agc 44 agc capacitor input symbol pin description fig.2 pin configuration. handbook, full pagewidth TEA5757h tea5759h mha112 1 2 3 4 5 6 7 8 9 10 11 33 32 31 30 29 28 27 26 25 24 23 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 ripple am-rfi fm-rfo rfgnd fmosc amosc v cc1 tune vco afo mpxi fm-ifi2 afc p1 p0 write-enable data bus-clock dgnd xtal mo/st v ddd lfi mute aflo afro pilfil ifgnd fmdem afc (n) afc (p) fsi v cc2 agc fm-rfi rfgnd am-ifi1 am-mixer fm-mixer v stab(a) fm-ifi1 am-ifi/o2 fm-ifo1 v stab(b)
1999 aug 26 7 philips semiconductors product speci?cation self tuned radio (str) TEA5757; tea5759 functional description the TEA5757; tea5759 is an integrated am/fm stereo radio circuit including digital tuning and control functions. the radio the am circuit incorporates a double balanced mixer, a one-pin low-voltage oscillator (up to 30 mhz) and is designed for distributed selectivity. the am input is designed to be connected to the top of a tuned circuit. agc controls the if amplification and for large signals it lowers the input impedance of the am front-end. the first am selectivity can be an if-tank (ift) as well as an ift combined with a ceramic filter; the second one is an ift. the fm circuit incorporates a tuned rf stage, a double balanced mixer, a one-pin oscillator and is designed for distributed if ceramic filters. the fm quadrature detector uses a ceramic resonator (or lc). the pll stereo decoder incorporates a signal dependent stereo-blend circuit and a soft-mute circuit. tuning the tuning concept of the self tuned radio (str) is based on fuzzy logic: it mimics hand tuning (hand tuning is a combination of coarse and fine tuning to the qualitatively best frequency position). as a consequence the tuning system is very fast. the tuning algorithm, which is controlled by the sequential circuit (see fig.1), is completely integrated; so there are only a few external components needed. the bus and the microcontroller can be kept very simple. the bus only consists of three wires (bus-clock, data and write-enable). the microcontroller must basically give two instructions: preset operation search operation. p reset operation in preset mode, the microcontroller has to load information such as frequency band, frequency and mono/stereo. this information has to be sent via the bus to the str. the internal algorithm controls the tuning sequence as follows: 1. the information is loaded into the shift register, the last-station memory and the counter. 2. the automatic frequency control (afc) is switched off. 3. the counter starts counting the frequency and the tuning voltage is varied until the desired frequency roughly equals the real frequency. 4. the afc is then switched on and the counter is switched off. 5. the real frequency is more precisely tuned to the desired frequency. after the afc has tuned the real frequency to the desired frequency an in-lock signal can be generated. in order to get a reliable in-lock signal, there are two parameters measured: the field strength and the s-curve. the field strength indicates the strength of the station and by looking at the s-curve the system can distinguish false in-locks from real in-locks (false in-locks occur on the wrong slope of the s-curve). in the event of fading or pulling the in-lock signal becomes logic 0 and the synthesizer will be switched on again and the algorithm will be repeated. s earch operation during a search operation, the only action the microcontroller has to take is: sending the desired band plus the direction and the search sensitivity level to the str. the search operation is performed by the charge pump until an in-lock signal is generated (combination of measuring the field strength and the s-curve). the afc then fine tunes to the station. the frequency belonging to the found station will be counted by the counter and written into the last-station memory and the shift register of the counter. at this time the frequency is available in the shift register and can be read by the microcontroller. the microcontroller decides whether the frequency is within the desired frequency band. if so, this frequency can be stored under a preset and if not, a new search action should be started. to ensure that the search function operates correctly under all conditions the following search sequence must be applied: store the current frequency in the memory issue the search command wait for data valid and read the new frequency if the new frequency is the same as the stored frequency, issue a pre-set step (e.g. 50 khz) and start the search sequence again.
1999 aug 26 8 philips semiconductors product speci?cation self tuned radio (str) TEA5757; tea5759 description of the bus the TEA5757; tea5759 radio has a bus which consists of three wires, as shown in table 1. table 1 bus signals these three signals, together with the mono/stereo pin (mo/st; pin 24), communicate with the microcontroller. the mono/stereo indicator has two functions, which are controlled by the bus-clock, as shown in table 2. table 2 bus-clock functions the TEA5757; tea5759 has a 25-bit shift register; see table 3 for an explanation of the shift register bits. if in search mode no transmitter can be found, all frequency bits of the shift register are set to logic 0. the bus protocol is depicted in figs 3 and 4. signal description pin bus-clock software driven clock input 27 data data input/output 28 write-enable write/read input 29 bus-clock mo/st (pin 24) result low low stereo low high mono high low tuned high high not tuned table 3 explanation of the shift register bits note 1. the output pins 30 and 31 can drive currents up to 5 ma; bits p0.19 and p1.18 control the output voltage of the control pins p0 (pin 30) and p1 (pin 31): a) bit p0.19 low sets p0 (pin 30) to low. b) bit p0.19 high sets p0 (pin 30) to high. c) bit p1.18 low sets p1 (pin 31) to low. d) bit p1.18 high sets p1 (pin 31) to high. bit description logic state result s.24 (msb) search start/end 0 after a search when a station is found or after a preset 1 during the search action d.23 search up/down 0 indicates if the radio has to search down 1 indicates if the radio has to search up m.22 mono/stereo 0 stereo is allowed 1 mono is required (radio switched to forced mono) b0.21 band see table 4 selects fm/mw/lw/sw band b1.20 p0.19 port note 1 user programmable bits which e.g. can be used as band switch driver p1.18 s0.17 search-level of station see table 5 determines the locking ?eld strength during an automatic search, automatic store or manual search s1.16 15 dummy - buffer f.14 to f.0 (lsb) frequency - determine the tuning frequency of the radio; see table 6 for the bit values
1999 aug 26 9 philips semiconductors product speci?cation self tuned radio (str) TEA5757; tea5759 table 4 truth table for bits b0.21 and b1.20 table 5 truth table for bits s1.16 and s0.17 table 6 values for bits f.14 to f.0 notes 1. fm value of the affected oscillators: a) fm value = fmrf + fmif (for TEA5757). b) fm value = fmrf - fmif (for tea5759). 2. am value of the affected oscillators: am value = amrf + amif. b0.21 b1.20 band select 00fm 01mw 10lw 11sw s1.16 s0.17 signal reception fm ( m v) am ( m v) 0 0 >5 >28 0 1 >10 >40 1 0 >30 >63 1 1 >150 >1000 bit bit value fm value (1) (khz) am value (2) (khz) f.14 2 14 - 16384 f.13 2 13 102400 8192 f.12 2 12 51200 4096 f.11 2 11 25600 2048 f.10 2 10 12800 1024 f. 9 2 9 6400 512 f. 8 2 8 3200 256 f. 7 2 7 1600 128 f. 6 2 6 800 64 f. 5 2 5 400 32 f. 4 2 4 200 16 f. 3 2 3 100 8 f. 2 2 2 50 4 f. 1 2 1 25 2 f. 0 2 0 12.5 1
1999 aug 26 10 philips semiconductors product speci?cation self tuned radio (str) TEA5757; tea5759 r eading data while write-enable is low data can be read by the microcontroller. at a rising edge of the bus-clock, data is shifted out of the register. this data is available from the point where the bus-clock is high until the next rising edge of the bus-clock occurs (see fig.3). to read the entire shift register 24 clock pulses are necessary. w riting data while write-enable is high the microcontroller can transmit data to the TEA5757; tea5759 (hard mute is active). at a rising edge of the bus-clock, the register shifts and accepts one bit into lsb. at clock low the microcontroller writes data (see fig.4). to write the entire shift register 25 clock pulses are necessary. fig.3 read data. handbook, full pagewidth write-enable bus-clock data data read data available data shift data available after search ready msb is low mbe817 fig.4 write data. handbook, full pagewidth data change data shift mbe818 write-enable bus-clock data
1999 aug 26 11 philips semiconductors product speci?cation self tuned radio (str) TEA5757; tea5759 b us timing handbook, full pagewidth t high t low t da v ih v il mbe819 write-enable bus-clock data fig.5 bus timing. table 7 digital inputs symbol parameter min. max. unit digital inputs v ih high-level input voltage 1.4 - v v il low-level input voltage - 0.6 v timing f clk clock input frequency - 300 khz t high clock high time 1.67 -m s t low clock low time 1.67 -m s t da shift register available after search ready - 14 m s
1999 aug 26 12 philips semiconductors product speci?cation self tuned radio (str) TEA5757; tea5759 limiting values in accordance with the absolute maximum rating system (iec 134). note 1. charge device model; equivalent to discharging a 200 pf capacitor via a 0 w series resistor. thermal characteristics symbol parameter conditions min. max. unit v cc1 supply voltage 0 13.2 v p tot total power dissipation t amb =70 c - 250 mw t stg storage temperature - 65 +150 c t amb ambient temperature - 15 +60 c t j junction temperature - 15 +150 c v es electrostatic handling voltage for all pins note 1 - 200 v symbol parameter conditions value unit r th(j-a) thermal resistance from junction to ambient in free air 65 k/w
1999 aug 26 13 philips semiconductors product speci?cation self tuned radio (str) TEA5757; tea5759 characteristics v cc1 =3v; t amb =25 c; unless otherwise speci?ed. symbol parameter conditions min. typ. max. unit v cc1 supply voltage 2.5 - 12 v v cc2 supply voltage for tuning -- 12 v v ddd supply voltage for digital part 2.5 - 12 v v tune tuning voltage 0.7 - v cc2 - 0.75 v i cc2 supply current for tuning in preset mode (band-end to band-end) -- 800 m a f bus-clock(max) maximum bus-clock frequency -- 300 khz i cc1 current consumption during acquisition of v cc1 am mode 12 15 18 ma fm mode 12.5 15.5 18.5 ma i dd current consumption during acquisition of i dd am mode - 4.8 - ma fm mode - 5.5 - ma i cc1 current consumption after acquisition of v cc1 am mode 12 15 18 ma fm mode 13 16 19 ma i dd current consumption after acquisition of i dd am mode - 3.3 - ma fm mode - 2.7 - ma t search synthesizer auto-search time for empty band fm mode -- 10 s t acq synthesizer preset acquisition time between two band limits fm - 100 - ms mw - 100 - ms lw - 200 - ms sw - 500 - ms f band frequency band range of the synthesizer am mode 0.144 - 30 mhz fm mode 50 - 150 mhz d f fm afc inaccuracy of fm -- 1 khz d f am afc inaccuracy of am -- 100 hz i p0(sink) sink current of software programmable output p0 v 30 =3v 4 6 - ma i p1(sink) sink current of software programmable output p1 v 31 =3v 4 6 - ma i p0(source) source current of software programmable output p0 v 30 =0v 5 9 - ma i p1(source) source current of software programmable output p1 v 31 =0v 5 9 - ma
1999 aug 26 14 philips semiconductors product speci?cation self tuned radio (str) TEA5757; tea5759 am characteristics input frequency f i = 1 mhz; m = 0.3; f m = 1 khz; measured in test circuit at pin 10 (see fig.9); s2 in position b; v i1 measured at input of matching network at pin 2; matching network adjusted to maximum output voltage at low input level; v n refers to pin voltages; v i(n) refers to test circuit (see fig.9); unless otherwise speci?ed. fm characteristics input frequency f i = 100 mhz; d f = 22.5 khz; f m = 1 khz; measured in test circuit (see fig.9) at pin 10; s2 in position b; v n refers to pin voltages; v i(n) refers to test circuit (see fig.9); unless otherwise speci?ed. symbol parameter conditions min. typ. max. unit v 10 af output voltage v i1 =5mv 364570mv v i1 rf sensitivity input voltage (s+n)/n = 26 db 40 55 70 m v v i1 large signal voltage handling capacity m = 0.8; thd 8% 150 300 - mv psrr power supply ripple rejection d v 7 = 100 mv (rms); 100 hz; v 7 = 3.0 v -- 47 - db i i input current (pin 2) v 44 = 0.2 v - 0 -m a c i input capacitance (pin 2) v 44 = 0.2 v -- 4pf g c front-end conversion gain v 44 = 0.2 v 5 10 14 db v 44 = 0.9 v - 26 - 14 0 db (s+n)/n signal plus noise-to-noise ratio - 50 - db thd total harmonic distortion v i1 =1mv - 0.8 2.0 % a 450 if suppression v 10 =30mv - 56 - db symbol parameter conditions min. typ. max. unit v 10 af output voltage v i5 =1mv 404857mv v i5 rf sensitivity input voltage (s+n)/n = 26 db 1 2 3.8 m v v i5 rf limiting sensitivity v 10 at - 3 db; v 10 is 0 db at v i5 =1mv 0.4 1.2 3.8 m v v i5 large signal voltage handling capacity thd < 5% - 500 - mv psrr power supply ripple rejection d v 7 = 100 mv (rms); 100 hz; v 7 = 3.0 v - 44 -- db g c front-end conversion gain 12 18 22 db (s+n)/n signal plus noise-to-noise ratio v i5 =1mv - 62 - db thd total harmonic distortion if ?lter sfe10.7ms3a20k-a - 0.3 0.8 % v 10 d v 7 ---------- ? ?? v 10 d v 7 ---------- ? ?? v 37 v i5 -------- - ? ??
1999 aug 26 15 philips semiconductors product speci?cation self tuned radio (str) TEA5757; tea5759 stereo decoder characteristics v i3(l + r) = 155 mv; v pilot = 15.5 mv; f = 1 khz; apply unmodulated rf signal of 100 mv to front-end to set radio to maximum channel separation; soft mute off (s4 in position a); unless otherwise speci?ed. tuning characteristics symbol parameter conditions min. typ. max. unit v 14/15 af output voltage - 160 - mv v pilot(s) switch to stereo - 812mv v pilot(m) switch to mono 2 5 - mv v af-l /v i3 mpx voltage gain - 1.5 - +1.5 db (s+n)/n signal plus noise-to-noise ratio v pilot = 15.5 mv (stereo) - 74 - db thd total harmonic distortion - 0.5 1.0 % a cs channel separation 26 30 - db a 19 carrier and harmonic suppression 19 khz (200 mv) = 0 db 27 32 - db a 38 38 khz 16 21 - db a stereo-blend v i5 = 200 m v2230 - db v i5 =20 m v - 12db mute(s) soft mute depth v i5 =3 m v; v 14 =v 15 - 10 - db v i5 =1 m v; v 14 =v 15 -- 6 - 10 db symbol parameter conditions min. typ. max. unit v fm fm voltage levels a - 3db -point at v i5 =2 m v high (auto-store/search) s0 = 1; s1 = 1 60 150 500 m v medium (auto-store/search) s0 = 0; s1 = 1 10 30 55 m v low (auto-store/search) s0 = 1; s1 = 0 4 10 20 m v nominal (preset mode/tuning indication) s0 = 0; s1 = 0 3 5 9 m v v am am voltage levels a - 3db -point at v i5 =2 m v high (auto-store/search) s0 = 1; s1 = 1 400 1000 2500 m v medium (auto-store/search) s0 = 0; s1 = 1 50 63 80 m v low (auto-store/search) s0 = 1; s1 = 0 32 40 50 m v nominal (preset mode/tuning indication) s0 = 0; s1 = 0 25 28 40 m v v afc(off) afc voltage off mode a - 3db -point at v i5 =2 m v fm mode - 3 -m v am mode - 25 -m v mute(h) hard mute depth write-enable = high - 60 - db
1999 aug 26 16 philips semiconductors product speci?cation self tuned radio (str) TEA5757; tea5759 this text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the acrobat reader .this text is here in _ white to force landscape pages to be rotated correctly when browsing through the pdf in the acrobat reader.this text is here inthis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the acrobat reader. white to force landscape pages to be ... fig.6 am mode. (1) audio signal. (2) noise. (3) harmonic distortion. handbook, full pagewidth 10 - 7 10 - 6 10 - 5 10 - 4 10 - 3 10 - 2 10 - 1 1 (3) (2) (1) 0 1 2 3 4 5 6 7 8 9 120 100 80 60 40 20 0 - 20 thd (%) v i1 (v) (db m v) 10 0 - 10 - 20 - 30 - 40 - 50 - 60 - 70 - 80 (db) mbe853
1999 aug 26 17 philips semiconductors product speci?cation self tuned radio (str) TEA5757; tea5759 this text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the acrobat reader .this text is here in _ white to force landscape pages to be rotated correctly when browsing through the pdf in the acrobat reader.this text is here inthis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the acrobat reader. white to force landscape pages to be ... fig.7 fm mode. (1) mono signal. (2) noise in mono mode. (3) left channel with modulation left. (4) right channel with modulation left. (5) noise in stereo mode. (6) harmonic distortion (measured with d f = 75 khz). handbook, full pagewidth 10 - 7 10 - 6 10 - 5 10 - 4 10 - 3 10 - 2 10 - 1 1 0 1 2 3 4 5 6 7 8 9 120 100 80 60 40 20 - 20 0 thd (%) v i5 (v) (db m v) 10 0 (1) (2) (3) (4) (5) (6) - 10 - 20 - 30 - 40 - 50 - 60 - 70 - 80 (db) mha115
1999 aug 26 18 philips semiconductors product speci?cation self tuned radio (str) TEA5757; tea5759 internal circuitry table 8 equivalent pin circuits and pin voltages pin no. pin symbol dc voltage (v) equivalent circuit am fm 1 ripple 2.1 2.1 2 am-rfi 0 0 3 fm-rfo 0 0 4 rfgnd 0 0 5 fmosc 0 0 70 pf 17 1 7 1 k w 3 k w mbe821 4 2 mbe822 3 42 43 220 w mha105 5 4 mbe823
1999 aug 26 19 philips semiconductors product speci?cation self tuned radio (str) TEA5757; tea5759 6 amosc 0 0 7v cc1 3.0 3.0 8 tune -- 9 vco 1.3 0.95 10 afo 0.6 0.7 pin no. pin symbol dc voltage (v) equivalent circuit am fm 6 4 mbe824 22 26 8 mbe825 1 k w 10 k w 9 17 mbe826 5 k w 10 17 mbe827
1999 aug 26 20 philips semiconductors product speci?cation self tuned radio (str) TEA5757; tea5759 11 mpxi 1.23 1.23 12 lfi 0.1 0.8 13 mute 0.7 0.7 14 aflo 0.65 0.65 pin no. pin symbol dc voltage (v) equivalent circuit am fm 9.5 k w 150 k w 150 k w 11 17 mbe828 4 k w 13 k w 12 17 mbe829 7 k w 50 k w 13 17 mbe830 5 k w 14 17 mbe831
1999 aug 26 21 philips semiconductors product speci?cation self tuned radio (str) TEA5757; tea5759 15 afro 0.65 0.65 16 pilfil 0.95 0.95 17 ifgnd 0 0 18 fmdem - 1.0 19 afc (n) -- pin no. pin symbol dc voltage (v) equivalent circuit am fm 5 k w 15 17 mbe832 10 k w 10 k w 16 17 mbe833 180 w 910 w 18 17 mbe834 10 k w 10 k w 19 mha106
1999 aug 26 22 philips semiconductors product speci?cation self tuned radio (str) TEA5757; tea5759 20 afc (p) -- 21 fsi -- 22 v cc2 -- 23 v ddd 3.0 3.0 24 mo/st -- 25 xtal -- 26 dgnd 0 0 pin no. pin symbol dc voltage (v) equivalent circuit am fm 10 k w 10 k w 20 mha107 40 k w 12 to 34 k w (dependent on bits 16 and 17) 21 26 1.4 v mbe836 24 26 100 w mbe837 50 k w 50 k w 50 k w 25 26 mbe838
1999 aug 26 23 philips semiconductors product speci?cation self tuned radio (str) TEA5757; tea5759 27 bus-clock -- 2 8 data -- 29 write-enable -- 30 p0 -- 31 p1 -- pin no. pin symbol dc voltage (v) equivalent circuit am fm 27 26 mbe839 28 29 26 mbe840 100 w 50 k w 100 k w mha108 30 23 20 k w 100 k w 120 w 26 mha109 31 23 20 k w 100 k w 120 w 26
1999 aug 26 24 philips semiconductors product speci?cation self tuned radio (str) TEA5757; tea5759 32 afc -- 33 fm-ifi2 - 0.73 34 v stab(b) 1.4 1.4 35 fm-ifo1 - 0.69 36 am-ifi/o2 1.4 1.4 pin no. pin symbol dc voltage (v) equivalent circuit am fm mbe842 32 34 20 k w mbe843 33 17 34 2.2 k w 140 w 6 pf mbe844 1 34 7 1 k w mbe845 34 35 560 w mbe846 36 17 34 3.6 k w 3.6 k w
1999 aug 26 25 philips semiconductors product speci?cation self tuned radio (str) TEA5757; tea5759 37 fm-ifi1 - 0.73 38 v stab(a) 1.4 1.4 39 fm-mixer - 1.0 40 am-mixer 1.4 1.4 41 am-ifi1 1.4 1.4 pin no. pin symbol dc voltage (v) equivalent circuit am fm mbe847 37 17 38 1.9 k w 140 w 6 pf mbe848 1 38 7 1 k w 30 pf 39 680 w mha110 mbe850 40 38 mbe851 41 17 38 7.5 k w 3 k w 7.5 k w
1999 aug 26 26 philips semiconductors product speci?cation self tuned radio (str) TEA5757; tea5759 42 rfgnd 0 0 43 fm-rfi - 0.73 44 agc 0.1 0.7 pin no. pin symbol dc voltage (v) equivalent circuit am fm 3 42 43 220 w mha105 mbe852 17 44 1 k w 1 k w 1 k w
1999 aug 26 27 philips semiconductors product speci?cation self tuned radio (str) TEA5757; tea5759 this text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the acrobat reader .this text is here in _ white to force landscape pages to be rotated correctly when browsing through the pdf in the acrobat reader.this text is here inthis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the acrobat reader. white to force landscape pages to be ... test and application information handbook, full pagewidth 100 m f 220 nf 4.7 nf 10 pf 22 pf 100 nf v stab(a) v stab(b) gnd p1 p0 tune 10 w 18 k w 47 k w 47 k w 75 khz 25 (13) (14) (14) 23 1 26 31 30 2 v stab(a) v stab(a) v stab(b) v cc2 l1 18 pf 18 pf 470 pf bb112 tune tune 470 nf 10 nf 10 m f 4.7 m f l4 l2 6404136 44 822 32 20 19 13 15 14 9 12 24 16 18 17 33 35 37 39 5 3 43 tune bb804 bb804 29 38 34 27 28 42 7 21 10 11 4 v stab(b) l5 68 k w 2.2 k w 10 k w 50 k w 470 nf 470 nf 100 nf 100 nf 12 nf 12 nf v cc1 mo/st left output right output k3 100 nf 2.2 m f v cc1 data bus-clock write-enable v stab(b) k2 l3 470 nf 330 pf 220 nf 18 pf bb112 22 nf TEA5757; tea5759 mha113 (4) k1 (3) (5) (7) (11) (10) (8) l6 (6) l7 (2) (9) 10 pf 18 k w tune l8 (1) (12) (12) fig.8 application diagram. (1) l8 = mc117 e523fn-2000242, 38 pf 3%, toko. (2) l7 = mc117 e523fn-2000242, 38 pf 3%, toko. (3) k1 = sfe10.7ms3, murata. (4) k2 = sfe10.7ms3, murata. (5) k3 = cda10.7-mg40-a, murata. (6) l6 = 60 nh. (7) l5 = 7p a7mcs-11845y, c = 180 pf, q = 90, toko. (8) l1 = 250 m h ferroceptor. (9) l2 = 7p 7drs-11459n, 110 m h at 796 khz, q = 80, toko. (10) l3 = 7p a7mcs-11844n, c = 180 pf, q = 90, toko. (11) l4 = 7p a7mcs-11845y, c = 180 pf, q = 90, toko. (12) de-emphasis time constant is 50 m s: c de-emp = 12 nf. de-emphasis time constant is 75 m s: c de-emp = 18 nf. (13) standard applications: 30 ppm at 25 c. short wave applications: 20 ppm at 25 c. (14) alternatively bb512, siemens or kv1561a, toko.
1999 aug 26 28 philips semiconductors product speci?cation self tuned radio (str) TEA5757; tea5759 this text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the acrobat reader .this text is here in _ white to force landscape pages to be rotated correctly when browsing through the pdf in the acrobat reader.this text is here inthis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the acrobat reader. white to force landscape pages to be ... handbook, full pagewidth 100 m f 220 nf 220 nf 1 nf 100 nf v stab(a) v stab(b) gnd p1 p0 10 w 47 k w 75 khz 25 23 1 26 31 30 2 v stab(b) v cc2 18 pf 18 pf 470 pf bb112 tune tune 470 nf 10 nf 10 m f l4 l2 6 40 41 36 44 822 32 20 19 13 15 14 9 12 24 16 18 17 33 35 37 39 s5 b a 5 3 43 bb804 29 38 34 27 28 42 7 21 10 11 4 v stab(b) l5 k3 100 nf v cc1 data bus-clock write-enable v stab(b) v stab(a) k2 470 nf TEA5757; tea5759 mha114 (4) k1 (3) (5) (11) (11) (7) (10) (8) 680 pf 50 w 43 w 6.8 w (6) (12) 1 mhz v i1 l1 50 w 3 k w 50 w 50 w 5 k w (9) (13) v stab(a) v i2 v i3 450 khz mpx 330 pf 220 nf s3 s2 a a b b a s1 b l3 4.7 m f 68 k w 8.2 k w 2.2 k w 10 k w 50 k w 470 nf 470 nf 100 nf 100 nf 12 nf 12 nf v cc1 mo/st left output right output 2.2 m f ba s4 50 w 50 w 330 w 10.7 mhz 1 nf v i4 50 w 27 w 91 w 560 w 100 mhz v i5 10 pf 18 k w tune l7 (2) bb804 10 pf 18 k w tune l8 (1) fig.9 test circuit. (1) l8 = mc117 e523fn-2000242, 38 pf 3%, toko. (2) l7 = mc117 e523fn-2000242, 38 pf 3%, toko. (3) k1 = sfe10.7ms3, murata. (4) k2 = sfe10.7ms3, murata. (5) k3 = cda10.7-mg40-a, murata. (6) l1 = 22281 - 30091. (7) l5 = 7p a7mcs-11845y, c = 180 pf, q = 90, toko. (8) l2 = 7p 7drs-11459n, 110 m h at 796 khz, q = 80, toko. (9) l3 = 7p a7mcs-11844n, c = 180 pf, q = 90, toko. (10) l4 = 7p a7mcs-11845y, c = 180 pf, q = 90, toko. (11) de-emphasis time constant is 50 m s: c de-emp =12nf. de-emphasis time constant is 75 m s: c de-emp =18nf. (12) standard applications: 30 ppm at 25 c. short wave applications: 20 ppm at 25 c. (13) alternatively bb512, siemens or kv1561a, toko.
1999 aug 26 29 philips semiconductors product speci?cation self tuned radio (str) TEA5757; tea5759 package outline unit a 1 a 2 a 3 b p ce (1) eh e ll p z y w v q references outline version european projection issue date iec jedec eiaj mm 0.25 0.05 1.85 1.65 0.25 0.40 0.20 0.25 0.14 10.1 9.9 0.8 1.3 12.9 12.3 1.2 0.8 10 0 o o 0.15 0.1 0.15 dimensions (mm are the original dimensions) note 1. plastic or metal protrusions of 0.25 mm maximum per side are not included. 0.95 0.55 sot307-2 95-02-04 97-08-01 d (1) (1) (1) 10.1 9.9 h d 12.9 12.3 e z 1.2 0.8 d e e b 11 c e h d z d a z e e v m a x 1 44 34 33 23 22 12 y q a 1 a l p detail x l (a ) 3 a 2 pin 1 index d h v m b b p b p w m w m 0 2.5 5 mm scale qfp44: plastic quad flat package; 44 leads (lead length 1.3 mm); body 10 x 10 x 1.75 mm sot307-2 a max. 2.10
1999 aug 26 30 philips semiconductors product speci?cation self tuned radio (str) TEA5757; tea5759 soldering introduction to soldering surface mount packages this text gives a very brief insight to a complex technology. a more in-depth account of soldering ics can be found in our data handbook ic26; integrated circuit packages (document order number 9398 652 90011). there is no soldering method that is ideal for all surface mount ic packages. wave soldering is not always suitable for surface mount ics, or for printed-circuit boards with high population densities. in these situations reflow soldering is often used. re?ow soldering reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. several methods exist for reflowing; for example, infrared/convection heating in a conveyor type oven. throughput times (preheating, soldering and cooling) vary between 100 and 200 seconds depending on heating method. typical reflow peak temperatures range from 215 to 250 c. the top-surface temperature of the packages should preferable be kept below 230 c. wave soldering conventional single wave soldering is not recommended for surface mount devices (smds) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems. to overcome these problems the double-wave soldering method was specifically developed. if wave soldering is used the following conditions must be observed for optimal results: use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave. for packages with leads on two sides and a pitch (e): C larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board; C smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the transport direction of the printed-circuit board. the footprint must incorporate solder thieves at the downstream end. for packages with leads on four sides, the footprint must be placed at a 45 angle to the transport direction of the printed-circuit board. the footprint must incorporate solder thieves downstream and at the side corners. during placement and before soldering, the package must be fixed with a droplet of adhesive. the adhesive can be applied by screen printing, pin transfer or syringe dispensing. the package can be soldered after the adhesive is cured. typical dwell time is 4 seconds at 250 c. a mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. manual soldering fix the component by first soldering two diagonally-opposite end leads. use a low voltage (24 v or less) soldering iron applied to the flat part of the lead. contact time must be limited to 10 seconds at up to 300 c. when using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 c.
1999 aug 26 31 philips semiconductors product speci?cation self tuned radio (str) TEA5757; tea5759 suitability of surface mount ic packages for wave and re?ow soldering methods notes 1. all surface mount (smd) packages are moisture sensitive. depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). for details, refer to the drypack information in the data handbook ic26; integrated circuit packages; section: packing methods . 2. these packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink (at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version). 3. if wave soldering is considered, then the package must be placed at a 45 angle to the solder wave direction. the package footprint must incorporate solder thieves downstream and at the side corners. 4. wave soldering is only suitable for lqfp, tqfp and qfp packages with a pitch (e) equal to or larger than 0.8 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm. 5. wave soldering is only suitable for ssop and tssop packages with a pitch (e) equal to or larger than 0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm. definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. package soldering method wave reflow (1) bga, sqfp not suitable suitable hlqfp, hsqfp, hsop, htssop, sms not suitable (2) suitable plcc (3) , so, soj suitable suitable lqfp, qfp, tqfp not recommended (3)(4) suitable ssop, tssop, vso not recommended (5) suitable data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the speci?cation.
? philips electronics n.v. sca all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owne r. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not con vey nor imply any license under patent- or other industrial or intellectual property rights. internet: http://www.semiconductors.philips.com 1999 67 philips semiconductors C a worldwide company for all other countries apply to: philips semiconductors, international marketing & sales communications, building be-p, p.o. box 218, 5600 md eindhoven, the netherlands, fax. +31 40 27 24825 argentina: see south america australia: 3 figtree drive, homebush, nsw 2140, tel. +61 2 9704 8141, fax. +61 2 9704 8139 austria: computerstr. 6, a-1101 wien, p.o. box 213, tel. +43 1 60 101 1248, fax. +43 1 60 101 1210 belarus: hotel minsk business center, bld. 3, r. 1211, volodarski str. 6, 220050 minsk, tel. +375 172 20 0733, fax. +375 172 20 0773 belgium: see the netherlands brazil: see south america bulgaria: philips bulgaria ltd., energoproject, 15th floor, 51 james bourchier blvd., 1407 sofia, tel. +359 2 68 9211, fax. +359 2 68 9102 canada: philips semiconductors/components, tel. +1 800 234 7381, fax. +1 800 943 0087 china/hong kong: 501 hong kong industrial technology centre, 72 tat chee avenue, kowloon tong, hong kong, tel. +852 2319 7888, fax. +852 2319 7700 colombia: see south america czech republic: see austria denmark: sydhavnsgade 23, 1780 copenhagen v, tel. +45 33 29 3333, fax. +45 33 29 3905 finland: sinikalliontie 3, fin-02630 espoo, tel. +358 9 615 800, fax. +358 9 6158 0920 france: 51 rue carnot, bp317, 92156 suresnes cedex, tel. +33 1 4099 6161, fax. +33 1 4099 6427 germany: hammerbrookstra?e 69, d-20097 hamburg, tel. +49 40 2353 60, fax. +49 40 2353 6300 hungary: see austria india: philips india ltd, band box building, 2nd floor, 254-d, dr. annie besant road, worli, mumbai 400 025, tel. +91 22 493 8541, fax. +91 22 493 0966 indonesia: pt philips development corporation, semiconductors division, gedung philips, jl. buncit raya kav.99-100, jakarta 12510, tel. +62 21 794 0040 ext. 2501, fax. +62 21 794 0080 ireland: newstead, clonskeagh, dublin 14, tel. +353 1 7640 000, fax. +353 1 7640 200 israel: rapac electronics, 7 kehilat saloniki st, po box 18053, tel aviv 61180, tel. +972 3 645 0444, fax. +972 3 649 1007 italy: philips semiconductors, via casati, 23 - 20052 monza (mi), tel. +39 039 203 6838, fax +39 039 203 6800 japan: philips bldg 13-37, kohnan 2-chome, minato-ku, tokyo 108-8507, tel. +81 3 3740 5130, fax. +81 3 3740 5057 korea: philips house, 260-199 itaewon-dong, yongsan-ku, seoul, tel. +82 2 709 1412, fax. +82 2 709 1415 malaysia: no. 76 jalan universiti, 46200 petaling jaya, selangor, tel. +60 3 750 5214, fax. +60 3 757 4880 mexico: 5900 gateway east, suite 200, el paso, texas 79905, tel. +9-5 800 234 7381, fax +9-5 800 943 0087 middle east: see italy netherlands: postbus 90050, 5600 pb eindhoven, bldg. vb, tel. +31 40 27 82785, fax. +31 40 27 88399 new zealand: 2 wagener place, c.p.o. box 1041, auckland, tel. +64 9 849 4160, fax. +64 9 849 7811 norway: box 1, manglerud 0612, oslo, tel. +47 22 74 8000, fax. +47 22 74 8341 pakistan: see singapore philippines: philips semiconductors philippines inc., 106 valero st. salcedo village, p.o. box 2108 mcc, makati, metro manila, tel. +63 2 816 6380, fax. +63 2 817 3474 poland: ul. lukiska 10, pl 04-123 warszawa, tel. +48 22 612 2831, fax. +48 22 612 2327 portugal: see spain romania: see italy russia: philips russia, ul. usatcheva 35a, 119048 moscow, tel. +7 095 755 6918, fax. +7 095 755 6919 singapore: lorong 1, toa payoh, singapore 319762, tel. +65 350 2538, fax. +65 251 6500 slovakia: see austria slovenia: see italy south africa: s.a. philips pty ltd., 195-215 main road martindale, 2092 johannesburg, p.o. box 58088 newville 2114, tel. +27 11 471 5401, fax. +27 11 471 5398 south america: al. vicente pinzon, 173, 6th floor, 04547-130 s?o paulo, sp, brazil, tel. +55 11 821 2333, fax. +55 11 821 2382 spain: balmes 22, 08007 barcelona, tel. +34 93 301 6312, fax. +34 93 301 4107 sweden: kottbygatan 7, akalla, s-16485 stockholm, tel. +46 8 5985 2000, fax. +46 8 5985 2745 switzerland: allmendstrasse 140, ch-8027 zrich, tel. +41 1 488 2741 fax. +41 1 488 3263 taiwan: philips semiconductors, 6f, no. 96, chien kuo n. rd., sec. 1, taipei, taiwan tel. +886 2 2134 2886, fax. +886 2 2134 2874 thailand: philips electronics (thailand) ltd., 209/2 sanpavuth-bangna road prakanong, bangkok 10260, tel. +66 2 745 4090, fax. +66 2 398 0793 turkey: yukari dudullu, org. san. blg., 2.cad. nr. 28 81260 umraniye, istanbul, tel. +90 216 522 1500, fax. +90 216 522 1813 ukraine : philips ukraine, 4 patrice lumumba str., building b, floor 7, 252042 kiev, tel. +380 44 264 2776, fax. +380 44 268 0461 united kingdom: philips semiconductors ltd., 276 bath road, hayes, middlesex ub3 5bx, tel. +44 208 730 5000, fax. +44 208 754 8421 united states: 811 east arques avenue, sunnyvale, ca 94088-3409, tel. +1 800 234 7381, fax. +1 800 943 0087 uruguay: see south america vietnam: see singapore yugoslavia: philips, trg n. pasica 5/v, 11000 beograd, tel. +381 11 62 5344, fax.+381 11 63 5777 printed in the netherlands 545002/03/pp 32 date of release: 1999 aug 26 document order number: 9397 750 06058

▲Up To Search▲

Price & Availability of TEA5757

	To Download TEA5757 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .